BeSang Announces High Area-Efficient Storage Capacitor Technology for DRAM

Super R-Stack Technology

PORTLAND, OR, June 30, 2020 /24-7PressRelease/ — BeSang Inc., pioneer in monolithic 3D IC technologies in Portland, Oregon, announces Super R-Stack technology for high area-efficient DRAM storage capacitor, which is expected to increase about 15% more capacitance in a given area compared to honeycomb-type storage capacitor. So far, honeycomb-type is being widely used for advanced DRAM products from 20nm to 10nm future sizes and believed it is the most area-efficient capacitor layout for DRAM. Similar to the case of transition from checker-type to honeycomb-type, Super R-Stack is to increase efficiency of storage capacitance with better layout scheme and might be the best if it is combined with BeSang’s 3D DRAM.

“15% more capacitance means jumping about 2 generations of DRAM scaling in the advanced products,” said Sang-Yun Lee, CEO of BeSang Inc. “And I am proud that BeSang provides Super R-Stack storage capacitor solutions along with ultra-low cost 3D DRAM technology solutions. As a result, BeSang has complete solutions for advanced DRAM technologies.”

BeSang is a fabless semiconductor company developing high-density and ultra-low cost semiconductor memory products and technologies along with IP development. The BeSang is headquartered in Hillsboro, Oregon, USA. Additional information is available at www.besang.com.


For the original version of this press release, please visit 24-7PressRelease.com here

BeSang Announces High Area-Efficient Storage Capacitor Technology for DRAM

Super R-Stack Technology

PORTLAND, OR, June 30, 2020 /24-7PressRelease/ — BeSang Inc., pioneer in monolithic 3D IC technologies in Portland, Oregon, announces Super R-Stack technology for high area-efficient DRAM storage capacitor, which is expected to increase about 15% more capacitance in a given area compared to honeycomb-type storage capacitor. So far, honeycomb-type is being widely used for advanced DRAM products from 20nm to 10nm future sizes and believed it is the most area-efficient capacitor layout for DRAM. Similar to the case of transition from checker-type to honeycomb-type, Super R-Stack is to increase efficiency of storage capacitance with better layout scheme and might be the best if it is combined with BeSang’s 3D DRAM.

“15% more capacitance means jumping about 2 generations of DRAM scaling in the advanced products,” said Sang-Yun Lee, CEO of BeSang Inc. “And I am proud that BeSang provides Super R-Stack storage capacitor solutions along with ultra-low cost 3D DRAM technology solutions. As a result, BeSang has complete solutions for advanced DRAM technologies.”

BeSang is a fabless semiconductor company developing high-density and ultra-low cost semiconductor memory products and technologies along with IP development. The BeSang is headquartered in Hillsboro, Oregon, USA. Additional information is available at www.besang.com.


For the original version of this press release, please visit 24-7PressRelease.com here

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